Epitaxial growth of ferromagnetic δ-phase manganese gallium on semiconducting scandium nitride (001)
نویسندگان
چکیده
Adam J. Hauser and Fengyuan Yang Department of Physics, The Ohio State University, 191 Woodruff Avenue, Columbus, Ohio 43210, USA (Dated: August 22, 2010) Abstract Ferromagnetic δ-phase manganese gallium layers with Mn/(Mn + Ga) = 60% have been successfully grown on ScN(001) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The in-plane epitaxial relationship of manganese gallium with respect to scandium nitride is determined to be [100]MnGa//[110]ScN and [110]MnGa//[100]ScN . Vibrating sample magnetometry measurements indicate out-of-plane magnetization of the film, suggesting strong magnetic anisotropy along the manganese gallium c-axis.
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